BD131 DATASHEET PDF
BD Transistor Datasheet pdf, BD Equivalent. Parameters and Characteristics. BD BD; NPN Power Transistor. FEATURES High current (max. 3 A) Low voltage (max. 45 V). APPLICATIONS General purpose power applications. BD datasheet, BD circuit, BD data sheet: PHILIPS – NPN power transistor,alldatasheet, datasheet, Datasheet search site for Electronic Components.
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This is noted by an abrupt switching of the collector-emitter voltage to a low value at point D. The equipment manufacturer should design so that initially and throughout life no absolute maximum value for the intended service is dataaheet with any device under the worst probable operating conditions with respect to variations in supply voltage, environment, equipment components, equipment control adjustment, load, signal or characteristics of the device under consideration and of all other devices in the equipment.
Type Nomenclature This section explains the system of type nomenclature used for Mullard Semi- conductor devices showing the significance of each type letter or number. On the horizontal axis the forward and reverse-biased base regions are clearly grouped, with the base open-circuit condition dividing the two regions.
The case temperature during soldering must not at any time exceed the maximum storage temperature. If the application con- dition is always within the selected Bs131 curve it is acceptable. Each part is completely reviewed annually; revised and reprinted where necessary.
T m i, The temperature of the surface making contact with a heatsink. Explanation of Datashert Data 1. Care should be taken not to bend the leads nearer than 1.
If the application condition just exceeds the selectedSOAR curve, then linear inter- polation between the family of curves used and the next lower duty cycle curves should indicate if the application is acceptable- For applications using non -square -wave pulses, reference should be made to the General Explanatory Notes on SOAR where conversion to equivalent square -wave pulses is explained.
J ‘ 7Z E’ The gain control performance of the BF is modified by these additional bx131 and the combination is re- garded as an ‘equivalent trans- istor’ See the curves on pages 8 to 14 Fig. If devices are stored above C before incorporation into equipmentsome deterioration of the external surface is likely to occur which may make soldering into the circuit difficult. Datasyeet equipment manufacturer should design so that initially and throughout life no design-maximum value for the intended service is exceeded with a bogey device under the worst probable operating cdnditions with respect to variations in supply voltage, environment, equipment components, equipment control adjustment, load, signal or characteristics of the device under consideration and of all other devices in the equipment.
Reissue of final data may be made from time to time to incorporate additional information resulting from prolonged production experience or to meet new applications.
A — detection diode, high speed diode, mixer diode. Short time excursions are allowed outside the permissible area provided that: The thermal capacity of the heatsink will be such that the transient effect of the power datasneet be averaged. The transistor may be dip-soldered at a solder temperature of C for a maximum time of 5 seconds. Absolute maximum ratings are limiting values of operating and environ- mental conditions applicable to any device of a specified type as defined by the published data, and should not be exceeded under the worst probable conditions.
These values are chosen by the device manufacturer to provide acceptable serviceability of the device, taking no responsibility for variation in equipment or environment, and the effects of vatasheet in operating conditions due to variations in the characteristics of the device under consideration and of all other devices in the equipment. In the case of an inductive load and when an energy rating is given, it may be permissible to operate outside the rated area provided the specified energy rating is not exceeded.
BD Datasheet(PDF) – NXP Semiconductors
Q ? Rectifier Diodes and Thyristors The group of figures indicates the rated repetitive peak reverse voltage, Vrrm, or the rated repetitive peak off-state voltage, Vdrm, whichever value is lower, in volts for each type.
N thfs 5 0. Stable continuous operation is ensured up to T am j: With their p-n-p complements Datzsheet and BD they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25W into 4 or 8J2 load. B — variable capacitance diode C — transistor for a. The Fatasheet is intended for use in the r.
(PDF) BD131 Datasheet download
These values are chosen by the device manufacturer to provide acceptable serviceability cf the device in average applications, taking responsibility for normal changes in operating conditions due to variations in supply voltage, environment, equipment components, equipment control adjust- ment, load, signal or characteristics of all other devices in the equipment.
If a discrete transistor is used, the collector will not be grounded, and should be linked to the base. These additions are as follows: Revisions to previous data are indicated by an arrow in the margin. The datashset permissible average value of the total reverse base current allowable in datasjeet reverse breakdown region. Front View Scale 3: A general expression from which the total permissible steady state power dissipation can be calculated is: I cu max – -I EM max.
If a PNP transistor is used the base is. Dataheet serial number consists of one letter Z, Y, X, W, etc. SB 7. TO Collector connected to the metal part of the mounting dayasheet Torque on nut: If the application condition just exceeds the selected SOAR curve, then linear interpol- ation between the family of curves used and the next lower duty cycle curves.
Previous 1 2 If the application condition is always within the selected SOAR curve it is acceptable.